Good quality 808nm 200mw infrared laser diode

QL80R4S-A/B/C/D/E-Z5 is a MOCVD grown 808nm band laser diode with quantum well structure.
It's an attractive light source, with a typical light output power of 200mW for optoelectronic devices
such as solid state laser pumping and medical use.
- Wavelength : 808 nm
- Optical Output Power : 200mW (CW)
- Package Type : TO-18 ( 5.6mm)
- Polarization : TE (Electric Field Parallel to the Junction Plane)
Good quality 808nm 200mw infrared laser diode
- Solid State Laser Pumping
- Medical Use
- Industrial Use
808nm laser diode
Place of Origin: korea
Brand Name: OSI
Package Type: Through Hole
Max. Forward Voltage: 3V
Max. Reverse Voltage: 2V
Max. Forward Current: 280mA
Max. Reverse Current: standard
Optical Output Power: 200mw 808nm diode laser for hair removal
Operating Temperature: -10 - +40 degree centigrade
Storage Temperature: -40 - +85 degree centigrade

Good quality 808nm 200mw infrared laser diode